静态随机存取存储器 2.5 or 3.3V 512K x 36 18M
- GS816036DGT-150I
- GSI Technology
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464-GS816036DGT-150I
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GSI Technology |
静态随机存取存储器 2.5 or 3.3V 512K x 36 18M
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静态随机存取存储器
- GS74116AGP-10I
- GSI Technology
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464-GS74116AGP-10I
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GSI Technology |
静态随机存取存储器
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静态随机存取存储器 NBT 静态随机存取存储器s, 9Mb, x32, 150MHz, Industrial Temp
- GS880Z32CGT-150I
- GSI Technology
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464-GS880Z32CGT-150I
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GSI Technology |
静态随机存取存储器 NBT 静态随机存取存储器s, 9Mb, x32, 150MHz, Industrial Temp
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静态随机存取存储器 Micropower 静态随机存取存储器s
- CY62177G30-55ZXI
- Infineon Technologies
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727-CY62177G3055ZXI
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Infineon Technologies |
静态随机存取存储器 Micropower 静态随机存取存储器s
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NOR闪存 4 Mbit, Wide Vcc (1.65V to 3.6V), -40C to 85C, DFN 2x3 (Tape & Reel), Single, Dual SPI NOR flash
- AT25DF041B-MAHN-T
- Dialog Semiconductor
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988-25DF041B-MAHNT
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Dialog Semiconductor |
NOR闪存 4 Mbit, Wide Vcc (1.65V to 3.6V), -40C to 85C, DFN 2x3 (Tape & Reel), Single, Dual SPI NOR flash
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NOR闪存 spiFlash, 128M-bit, 4Kb Uniform Sector
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454-W25Q128JWPIMTR
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Winbond |
NOR闪存 spiFlash, 128M-bit, 4Kb Uniform Sector
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NOR闪存 spiFlash, 1G-bit, 4Kb Uniform Sector
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454-W25Q01JVZEIM
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Winbond |
NOR闪存 spiFlash, 1G-bit, 4Kb Uniform Sector
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NVRAM 1024k Nonvolatile SRAM with Battery Monitor
- DS1345YP-100+
- Maxim Integrated
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700-DS1345YP-100
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Maxim Integrated |
NVRAM 1024k Nonvolatile SRAM with Battery Monitor
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NVRAM 1Mb 3V 25ns 64K x 16 nvSRAM
- CY14B101NA-ZS25XI
- Infineon Technologies
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727-CY14B101NAZS25XI
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Infineon Technologies |
NVRAM 1Mb 3V 25ns 64K x 16 nvSRAM
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NVRAM 256k Nonvolatile SRAM
- DS1230YP-100+
- Maxim Integrated
|
700-DS1230YP-100
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Maxim Integrated |
NVRAM 256k Nonvolatile SRAM
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NVRAM 256K (32Kx8) 70ns
- M48Z35Y-70PC1
- STMicroelectronics
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511-M48Z35Y70PC1
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STMicroelectronics |
NVRAM 256K (32Kx8) 70ns
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NVRAM 64K (8Kx8) 100ns
- M48Z08-100PC1
- STMicroelectronics
|
511-M48Z0810PC1
|
STMicroelectronics |
NVRAM 64K (8Kx8) 100ns
|
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NVRAM 1Mb 3V 45ns 128K x 8 nvSRAM
- CY14B101LA-BA45XI
- Infineon Technologies
|
727-CY14B101LABA45XI
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Infineon Technologies |
NVRAM 1Mb 3V 45ns 128K x 8 nvSRAM
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NVRAM 4Mb 3V 45ns 512K x 8 nvSRAM
- CY14B104LA-ZS45XI
- Infineon Technologies
|
727-CY14B104LAZS45XI
|
Infineon Technologies |
NVRAM 4Mb 3V 45ns 512K x 8 nvSRAM
|
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NVRAM 1024k Nonvolatile SRAM
- DS1245AB-85+
- Maxim Integrated
|
700-DS1245AB-85+
|
Maxim Integrated |
NVRAM 1024k Nonvolatile SRAM
|
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NVRAM 256k Nonvolatile SRAM
- DS1230AB-150+
- Maxim Integrated
|
700-DS1230AB-150
|
Maxim Integrated |
NVRAM 256k Nonvolatile SRAM
|
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静态随机存取存储器 1.8/2.5V 4M x 36 144M
- GS81280Z36GT-200IV
- GSI Technology
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464-81280Z36GT200IV
|
GSI Technology |
静态随机存取存储器 1.8/2.5V 4M x 36 144M
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静态随机存取存储器 2.5 or 3.3V 256K x 36 9M
- GS882Z36CGD-200I
- GSI Technology
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464-GS882Z36CGD-200I
|
GSI Technology |
静态随机存取存储器 2.5 or 3.3V 256K x 36 9M
|
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NVRAM 64k Nonvolatile SRAM
- DS1225AB-200+
- Maxim Integrated
|
700-DS1225AB-200
|
Maxim Integrated |
NVRAM 64k Nonvolatile SRAM
|
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F-RAM 4Mbit FRAM, SPI, 1.7 1.95V - DFN8 T&R (AEC-Q100 125?)
- MB85RS4MLYPN-GS-AWEWE1
- Fujitsu Semiconductor
|
249-85S4MLYPNGSAWW1
|
Fujitsu Semiconductor |
F-RAM 4Mbit FRAM, SPI, 1.7 1.95V - DFN8 T&R (AEC-Q100 125?)
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