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选择	图像	零件编号	制造商1	描述	数据表	供货情况	单价（含13%增值税）根据您的数量，按照单价筛选表格中的结果。	数量	RoHS	电阻	容差	功率额定值	温度系数	外壳代码 - in	外壳代码 - mm

产品图片	产品名称	制造商	描述说明	询价
晶体管输出光电耦合器 Phototransistor Out Single CTR 40-80% CNY17-1X007 Vishay Semiconductors	782-CNY17-1X007	Vishay Semiconductors	晶体管输出光电耦合器 Phototransistor Out Single CTR 40-80%
光电二极管输出光电耦合器 Driver 4-pin SOP T&R Driver 4-pin SOP T& APV1121SX Panasonic Industrial Devices	769-APV1121SX	Panasonic Industrial Devices	光电二极管输出光电耦合器 Driver 4-pin SOP T&R Driver 4-pin SOP T&
磁阻随机存取存储器 (MRAM) M301620400540IW 16MB HIGH PERFORMANCE QSPI 54MHZ IND MRA M30162040054X0IWAY Renesas Electronics	972-M301620454X0IWAY	Renesas Electronics	磁阻随机存取存储器 (MRAM) M301620400540IW 16MB HIGH PERFORMANCE QSPI 54MHZ IND MRA
磁阻随机存取存储器 (MRAM) M30162040054X0I 16MB HIGH PERFORMANCE QSPI 54MHZ IND MRA M30162040054X0ISAR Renesas Electronics	972-M301620454X0ISAR	Renesas Electronics	磁阻随机存取存储器 (MRAM) M30162040054X0I 16MB HIGH PERFORMANCE QSPI 54MHZ IND MRA
磁阻随机存取存储器 (MRAM) M30042040054X0P 4MB HIGH PERFORMANCE QSPI 54MHZ IND PLUS M30042040054X0PWAY Renesas Electronics	972-ZSC31050FIC	Renesas Electronics	磁阻随机存取存储器 (MRAM) M30042040054X0P 4MB HIGH PERFORMANCE QSPI 54MHZ IND PLUS
逻辑输出光电耦合器 5.0A IGBT Gate Drive ACNW3190-000E Broadcom / Avago	630-ACNW3190-000E	Broadcom / Avago	逻辑输出光电耦合器 5.0A IGBT Gate Drive
磁阻随机存取存储器 (MRAM) M30042040054X0P 4MB HIGH PERFORMANCE QSPI 54MHZ IND PLUS M30042040054X0PWAR Renesas Electronics	972-ZSC31050FIB	Renesas Electronics	磁阻随机存取存储器 (MRAM) M30042040054X0P 4MB HIGH PERFORMANCE QSPI 54MHZ IND PLUS
磁阻随机存取存储器 (MRAM) M30042040054X0P 4MB HIGH PERFORMANCE QSPI 54MHZ IND PLUS M30042040054X0PSAY Renesas Electronics	972-AOPT1206AC1BU	Renesas Electronics	磁阻随机存取存储器 (MRAM) M30042040054X0P 4MB HIGH PERFORMANCE QSPI 54MHZ IND PLUS
磁阻随机存取存储器 (MRAM) M10162040108X0P 16MB HIGH PERFORMANCE QSPI 108MHZ IND PL M10162040108X0PSAY Renesas Electronics	972-ZSC31050FAC	Renesas Electronics	磁阻随机存取存储器 (MRAM) M10162040108X0P 16MB HIGH PERFORMANCE QSPI 108MHZ IND PL
磁阻随机存取存储器 (MRAM) M10162040108X0I 16MB HIGH PERFORMANCE QSPI 108MHZ IND MR M10162040108X0IWAY Renesas Electronics	972-ZSC31010CEC	Renesas Electronics	磁阻随机存取存储器 (MRAM) M10162040108X0I 16MB HIGH PERFORMANCE QSPI 108MHZ IND MR
磁阻随机存取存储器 (MRAM) M10162040054X0I 16MB HIGH PERFORMANCE QSPI 54MHZ IND MRA M10162040054X0IWAY Renesas Electronics	972-ZSC31014EAB	Renesas Electronics	磁阻随机存取存储器 (MRAM) M10162040054X0I 16MB HIGH PERFORMANCE QSPI 54MHZ IND MRA
磁阻随机存取存储器 (MRAM) M10162040054X0I 16MB HIGH PERFORMANCE QSPI 54MHZ IND MRA M10162040054X0IWAR Renesas Electronics	972-ZSC31015EED	Renesas Electronics	磁阻随机存取存储器 (MRAM) M10162040054X0I 16MB HIGH PERFORMANCE QSPI 54MHZ IND MRA
磁阻随机存取存储器 (MRAM) M10162040054X0I 16MB HIGH PERFORMANCE QSPI 54MHZ IND MRA M10162040054X0ISAY Renesas Electronics	972-ZSC31010CIB	Renesas Electronics	磁阻随机存取存储器 (MRAM) M10162040054X0I 16MB HIGH PERFORMANCE QSPI 54MHZ IND MRA
磁阻随机存取存储器 (MRAM) M10082040108X0P 8MB HIGH PERFORMANCE QSPI 108MHZ IND PLU M10082040108X0PWAR Renesas Electronics	972-ZSC31015EIB	Renesas Electronics	磁阻随机存取存储器 (MRAM) M10082040108X0P 8MB HIGH PERFORMANCE QSPI 108MHZ IND PLU
磁阻随机存取存储器 (MRAM) M3008316 8MB PARALLEL ASYNCHRONOUS X16 35NS 磁阻随机存取存储器 (MRAM) M3008316045NX0IBCR Renesas Electronics	968-M38316045NX0IBCR	Renesas Electronics	磁阻随机存取存储器 (MRAM) M3008316 8MB PARALLEL ASYNCHRONOUS X16 35NS 磁阻随机存取存储器 (MRAM)
磁阻随机存取存储器 (MRAM) 1Mb 3.3V 64Kx16 35ns Parallel 磁阻随机存取存储器 (MRAM) MR0A16AYS35 Everspin Technologies	936-MR0A16AYS35	Everspin Technologies	磁阻随机存取存储器 (MRAM) 1Mb 3.3V 64Kx16 35ns Parallel 磁阻随机存取存储器 (MRAM)
NVRAM Non Volatile SRAMs CY14B116N-ZSP45XIT Infineon Technologies	727-CY14B116N-ZSP45X	Infineon Technologies	NVRAM Non Volatile SRAMs
高速光耦合器 1MBd 2Ch 25mA HCPL-4534-300E Broadcom / Avago	630-HCPL-4534-300E	Broadcom / Avago	高速光耦合器 1MBd 2Ch 25mA
高速光耦合器 1MBd 2Ch 16mA HCPL-253L-000E Broadcom / Avago	630-HCPL-253L-000E	Broadcom / Avago	高速光耦合器 1MBd 2Ch 16mA
高线性光耦合器 1 Ch 60mW 25mA HCNR200-050E Broadcom / Avago	630-HCNR200-050E	Broadcom / Avago	高线性光耦合器 1 Ch 60mW 25mA

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