第462页_PRODUCT_Hong Kong Mingjia IC Technology Co., Ltd

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Product image	Product name	Manufacturer	Explain
SRAM 2.5 or 3.3V 512K x 32 16M GS816032DGT-200 GSI Technology	464-GS816032DGT-200	GSI Technology	SRAM 2.5 or 3.3V 512K x 32 16M
SRAM 1.8/2.5V 1M x 36 36M GS832136AGD-250IV GSI Technology	464-GS832136AGD250IV	GSI Technology	SRAM 1.8/2.5V 1M x 36 36M
SRAM 1.8 or 1.5V 1M x 36 36M GS8342Q36BGD-333I GSI Technology	464-GS8342Q36BGD333I	GSI Technology	SRAM 1.8 or 1.5V 1M x 36 36M
FPGA - Field Programmable Gate Array 50000 SYSTEM GATE 2.5 VOLT LOGIC CELL ARRAY XC2S50-5FG256I Xilinx	217-XC2S50-5FG256I	Xilinx	FPGA - Field Programmable Gate Array 50000 SYSTEM GATE 2.5 VOLT LOGIC CELL ARRAY
FPGA - Field Programmable Gate Array The factory is currently not accepting orders for this product. EP2C35F484C8 Intel / Altera	989-EP2C35F484C8	Intel / Altera	FPGA - Field Programmable Gate Array The factory is currently not accepting orders for this product.
SRAM 2Mb 128K x 16 45ns Async SRAM IS62WV12816BLL-45TLI ISSI	870-62WV12816B45TLI	ISSI	SRAM 2Mb 128K x 16 45ns Async SRAM
SRAM 2Mb, Low Power/Power Saver,Async,128K x 16,45ns,2.2v 3.6v,44 Pin TSOP II, RoHS IS62WV12816EBLL-45TLI ISSI	870-6212816EBLL45TLI	ISSI	SRAM 2Mb, Low Power/Power Saver,Async,128K x 16,45ns,2.2v 3.6v,44 Pin TSOP II, RoHS
SRAM 4Mb, Low Power/Power Saver,Async,512K x 8,45ns,2.2v 3.6v,32 Pin TSOP II, RoHS IS62WV5128EBLL-45T2LI ISSI	870-625128EBLL45T2LI	ISSI	SRAM 4Mb, Low Power/Power Saver,Async,512K x 8,45ns,2.2v 3.6v,32 Pin TSOP II, RoHS
SRAM 1Mb, Low Power/Power Saver,Async,128K x 8,45ns,2.2v 3.6v,32 Pin TSOP I (8x20mm), RoHS IS62WV1288FBLL-45TLI ISSI	870-62WV1288FBLL45TI	ISSI	SRAM 1Mb, Low Power/Power Saver,Async,128K x 8,45ns,2.2v 3.6v,32 Pin TSOP I (8x20mm), RoHS
SRAM 16Mb, Low Power/Power Saver,Async,1Mb x 16/2Mb x 8, 55ns, 2.2v 3.6v,48 Pin TSOP I, RoHS IS62WV102416DBLL-55TLI ISSI	870-62WV106DBLL55TLI	ISSI	SRAM 16Mb, Low Power/Power Saver,Async,1Mb x 16/2Mb x 8, 55ns, 2.2v 3.6v,48 Pin TSOP I, RoHS
SRAM 32Mb High-Speed Async 1Mbx16 10ns IS61WV204816BLL-10BLI ISSI	870-WV204816BLL10BLI	ISSI	SRAM 32Mb High-Speed Async 1Mbx16 10ns
SRAM 32Mb High-Speed Async 2Mbx16 10ns IS61WV204816BLL-10TLI ISSI	870-WV204816BLL10TLI	ISSI	SRAM 32Mb High-Speed Async 2Mbx16 10ns
SRAM 32Mb,Pseudo SRAM,Asynch/Page/Burst CRAM 1.5,2M x 16,70ns,1.7v 1.95v,54 Ball BGA (6x8 mm), RoHS IS66WVC2M16EALL-7010BLI ISSI	870-VC2M16EAL7010BLI	ISSI	SRAM 32Mb,Pseudo SRAM,Asynch/Page/Burst CRAM 1.5,2M x 16,70ns,1.7v 1.95v,54 Ball BGA (6x8 mm), RoHS
SRAM GS74116AGP-12I GSI Technology	464-GS74116AGP-12I	GSI Technology	SRAM
SRAM 2Mb, Low Power/Power Saver,Async,256K x 8,45ns,2.2v 3.6v,32 Pin sTSOP I (8x13.4mm), RoHS IS62WV2568EBLL-45HLI ISSI	870-622568EBLL45HLI	ISSI	SRAM 2Mb, Low Power/Power Saver,Async,256K x 8,45ns,2.2v 3.6v,32 Pin sTSOP I (8x13.4mm), RoHS
SRAM 4Mb,High-Speed/Low Power,Async with ECC,256K x 16,8ns/3.3v +/-10%,or 10ns/2.4v-3.6v,48 Ball mBGA (6x8 mm), RoHS IS61WV25616EFBLL-10BLI ISSI	870-61WV2516EFBLL0BI	ISSI	SRAM 4Mb,High-Speed/Low Power,Async with ECC,256K x 16,8ns/3.3v +/-10%,or 10ns/2.4v-3.6v,48 Ball mBGA (6x8 mm), RoHS
SRAM 4Mb,High-Speed/Low Power,Async with ECC,256K x 16,8ns/3.3v +/-10%,or 10ns/2.4v-3.6v,44 Pin TSOP II, RoHS IS61WV25616EFBLL-10TLI ISSI	870-61WV2516EFBLL0TI	ISSI	SRAM 4Mb,High-Speed/Low Power,Async with ECC,256K x 16,8ns/3.3v +/-10%,or 10ns/2.4v-3.6v,44 Pin TSOP II, RoHS
SRAM 32Mb,Pseudo SRAM,Asynch/Page, 2M x 16,70ns,VDD 2.7V 3.6V, VDDQ 2.7V 3.6V,48 Ball BGA (6x8 mm), RoHS IS66WVE2M16EBLL-70BLI ISSI	870-66E2M16EBLL70BLI	ISSI	SRAM 32Mb,Pseudo SRAM,Asynch/Page, 2M x 16,70ns,VDD 2.7V 3.6V, VDDQ 2.7V 3.6V,48 Ball BGA (6x8 mm), RoHS
SRAM 1M (128Kx8) 10ns Async SRAM 3.3v IS63WV1288DBLL-10TLI ISSI	870-63WV1288DB10TLI	ISSI	SRAM 1M (128Kx8) 10ns Async SRAM 3.3v
SRAM 36Mb,"No-Wait"/Flowthrough,Sync,1Mb x 36,6.5ns,3.3v I/O,100 Pin TQFP, RoHS IS61NLF102436B-6.5TQLI ISSI	870-61NLF136B6.5TQLI	ISSI	SRAM 36Mb,"No-Wait"/Flowthrough,Sync,1Mb x 36,6.5ns,3.3v I/O,100 Pin TQFP, RoHS